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FNA25012A - onsemi

Description: 1200 V - 50 A 3-Phase IGBT Inverter, Including Control ICs for Gate Drive and Protections; Low-Loss, Short-Circuit-Rated IGBTs; Very Low Thermal Resistance Using AlN DBC Substrate; Built-In Bootstrap Diodes and Dedicated Vs Pins Simplify PCB Layout; Separate Open-Emitter Pins from Low-Side IGBTs for Three-Phase Current Sensing; Single-Grounded Power Supply Supported; Built-In NTC Thermistor for Temperature Monitoring and Management; Adjustable Over-Current Protection via Integrated Sense-IGBTs; Isolation Ra

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