FNA25060 - onsemi

Description: 600 V - 50 A 3-Phase IGBT Inverter, Including Control ICs for Gate Drive and Protections; Built-In Bootstrap Diodes and Dedicated Vs Pins Simplify PCB Layout; Separate Open-Emitter Pins from Low-Side IGBTs for Three-Phase Current Sensing; Isolation Rating of 2500 Vrms / 1 min.; Very Low Thermal Resistance Using Al2O3 DBC Substrate; Low-Loss, Short-Circuit-Rated IGBTs; Adjustable Over-Current Protection via Integrated Sense-IGBTs; Built-In NTC Thermistor for Temperature Monitoring and Management; Single-Grou