FOD3120SD - onsemi

Description: High noise immunity characterized by 35kV/µs minimum common mode rejection; 2.5A peak output current driving capability for most 800V/20A IGBT; Use of P-channel MOSFETs at output stage enables output voltage swing close to the supply rail; Wide supply voltage range from 15V to 30V; Fast switching speed; 400ns max. propagation delay; 100ns max. pulse width distortion; Under-Voltage LockOut (UVLO) with hysteresis; Extended industrial temperate range, -40°C to 100°C temperature range; Safety and regulatory app