FQD12N20TM - onsemi
Description: Improved dv/dt capability; Fast switching; 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V; Low gate charge ( typical 18 nC); 100% avalanche tested; Low Crss ( typical 18 pF)
Description: Improved dv/dt capability; Fast switching; 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V; Low gate charge ( typical 18 nC); 100% avalanche tested; Low Crss ( typical 18 pF)
