FQD13N06TM - onsemi
Description: 10A, 60V, RDS(on) = 140mΩ(Max.) @VGS = 10 V, ID = 5A; Low Crss ( Typ. 15pF); Low gate charge ( Typ. 5.8nC); 100% avalanche tested
Description: 10A, 60V, RDS(on) = 140mΩ(Max.) @VGS = 10 V, ID = 5A; Low Crss ( Typ. 15pF); Low gate charge ( Typ. 5.8nC); 100% avalanche tested
