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FQD13N06TM - onsemi

Description: 10A, 60V, RDS(on) = 140mΩ(Max.) @VGS = 10 V, ID = 5A; Low Crss ( Typ. 15pF); Low gate charge ( Typ. 5.8nC); 100% avalanche tested

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PCB Footprints
FQD13N06TM - onsemi PCB footprint - Other - Other - D-PAk_2021.
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FQD13N06TM Details

  • Manufacturer Part Number:

    FQD13N06TM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    85 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.14 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQD13N06TM Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FQD13N06TM can withstand is 150°C.
  • To ensure the FQD13N06TM is properly biased, make sure to provide a gate-source voltage (Vgs) between 4V and 10V, and a drain-source voltage (Vds) within the recommended operating range.
  • For optimal thermal performance, use a PCB with a thermal pad and ensure good thermal conductivity between the device and the heat sink. Keep the drain and source pins as close as possible to minimize inductance.
  • Yes, the FQD13N06TM is suitable for high-frequency switching applications up to 1 MHz. However, ensure proper PCB layout and decoupling to minimize ringing and EMI.
  • Handle the FQD13N06TM with ESD-protective equipment and follow proper ESD handling procedures to prevent damage. Use an ESD-protected workstation and wear an ESD strap when handling the device.

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FQD13N06TM Overview

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Part Image FQD13N06LTF Rochester Electronics LLC

11A, 60V, 0.145ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3

Part Image FQD13N06LTM Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD13N06LTF Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD13N06LTM_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD13N06 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

For a full list of alternate parts for FQD13N06TM, check out Findchips.com