FQPF13N50CF - onsemi
Description: 100% avalanche tested; Low Crss ( Typ. 20pF); Low gate charge ( Typ. 43nC); Fast recovery body diode (Typ. 100ns); 13A, 500V, RDS(on) = 540mΩ(Max.) @VGS = 10 V, ID = 6.5A
Description: 100% avalanche tested; Low Crss ( Typ. 20pF); Low gate charge ( Typ. 43nC); Fast recovery body diode (Typ. 100ns); 13A, 500V, RDS(on) = 540mΩ(Max.) @VGS = 10 V, ID = 6.5A
