Part Image

FQPF13N50CF - onsemi

Description: 100% avalanche tested; Low Crss ( Typ. 20pF); Low gate charge ( Typ. 43nC); Fast recovery body diode (Typ. 100ns); 13A, 500V, RDS(on) = 540mΩ(Max.) @VGS = 10 V, ID = 6.5A

Download FQPF13N50CF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FQPF13N50CF - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 FULLPACK CASE 221AT ISSUE A
click to zoom

FQPF13N50CF Details

  • Manufacturer Part Number:

    FQPF13N50CF

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Additional Feature:

    FAST SWITCHING

  • Avalanche Energy Rating (Eas):

    530 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.54 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    48 W

  • Pulsed Drain Current-Max (IDM):

    52 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQPF13N50CF Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FQPF13N50CF can withstand is 150°C. However, it's recommended to operate the device at a temperature below 125°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
  • The recommended gate drive voltage for the FQPF13N50CF is between 10V and 15V. However, the exact voltage may vary depending on the specific application and switching frequency.
  • Yes, the FQPF13N50CF is suitable for high-frequency switching applications up to 100 kHz. However, the device's performance and reliability may degrade at frequencies above 50 kHz.
  • To protect the FQPF13N50CF from overvoltage and overcurrent, use a voltage clamp or a surge protector to limit the voltage to 500V or less. Additionally, use a current sense resistor and a fuse to detect and interrupt overcurrent conditions.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FQPF13N50CF Overview

Use the download button to access the FQPF13N50CF schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like FQPF1, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FQPF13N50CF

Showing 0 results