FQPF3N80C - onsemi
Description: Low gate charge ( Typ. 13nC); 100% avalanche tested; 3A, 800V, RDS(on) = 4.8Ω(Max.) @VGS = 10 V, ID = 1.5A; Low Crss ( Typ. 5.5pF)
Description: Low gate charge ( Typ. 13nC); 100% avalanche tested; 3A, 800V, RDS(on) = 4.8Ω(Max.) @VGS = 10 V, ID = 1.5A; Low Crss ( Typ. 5.5pF)
