Please enter a minimum 3 letters or numbers
Technical Content
Part Image

FQPF3N80C - onsemi

Description: Low gate charge ( Typ. 13nC); 100% avalanche tested; 3A, 800V, RDS(on) = 4.8Ω(Max.) @VGS = 10 V, ID = 1.5A; Low Crss ( Typ. 5.5pF)

Download FQPF3N80C Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
FQPF3N80C - onsemi - PCB symbol
click to zoom
PCB Footprints
FQPF3N80C - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT ISSUE B_2023
click to zoom
3D Models
FQPF3N80C - onsemi - 3D model - Transistor Outline, Vertical - TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT ISSUE B_2023
click to zoom
  • Datasheet Download Datasheet
  • Stock & Prices $ Price & Stock for FQPF3N80C
  • Part Number FQPF3N80C
  • Manufacturer onsemi
  • Pin Count 3
  • Part Category MOSFET (N-Channel)
  • Package Category Transistor Outline, Vertical
  • Footprint Name Transistor Outline, Vertical - TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT ISSUE B_2023
  • Released Date Apr 26, 2023
  • Last Modified Date Jan 22, 2025 4:53 PM UTC
  • Pinout / Pin List Click Here (Member Only)

FQPF3N80C Details

  • Manufacturer Part Number:

    FQPF3N80C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.2

  • Avalanche Energy Rating (Eas):

    320 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    4.8 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    39 W

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQPF3N80C Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FQPF3N80C is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper biasing, make sure to provide a stable gate-source voltage (Vgs) between 2V and 5V, and a drain-source voltage (Vds) within the recommended operating range. Also, ensure the gate current is limited to the recommended maximum value.
  • For optimal thermal performance, use a PCB with a thick copper layer (at least 2 oz) and a thermal relief pattern under the device. Ensure good thermal conductivity between the device and the heat sink or PCB. A thermal interface material (TIM) can be used to improve heat transfer.
  • Handle the device with ESD-protective equipment and follow proper ESD handling procedures. Use an ESD-protected workstation and wear an ESD strap or wrist strap. Avoid touching the device's pins or leads, and use a conductive foam or ESD bag for storage.
  • Use a soldering iron with a temperature range of 250°C to 260°C, and a soldering time of 3-5 seconds. Ensure the soldering iron is ESD-protected and use a solder with a melting point above 217°C.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FQPF3N80C Overview

Use the download button to access the FQPF3N80C schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FQPF3, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FQPF3N80C

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑

FQPF3N80C Alternates

Showing results

Image Part Number Model
Part Image FQPF3N80CYDTU Rochester Electronics LLC

3A, 800V, 4.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN
Part Image FQPF3N80CYDTU Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 3A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB