GT50NR21 - Toshiba

Description: (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.20 µs (typ.) (IC = 50 A) FWD : trr = 0.50 µs (typ.) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.8 V (typ.) (IC = 50 A) (6) High junction temperature : Tj = 175 (max)