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GT50NR21 - Toshiba

Description: (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.20 µs (typ.) (IC = 50 A) FWD : trr = 0.50 µs (typ.) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.8 V (typ.) (IC = 50 A) (6) High junction temperature : Tj = 175 (max)

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GT50NR21 - Toshiba - PCB symbol

PCB Footprints

GT50NR21 - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-3P(N)

3D Models

GT50NR21 - Toshiba - 3D model - Transistor Outline, Vertical - TO-3P(N)

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Stock & Prices Price & Stock for GT50NR21
Part Number GT50NR21
Manufacturer Toshiba
Pin Count 3
Part Category Transistor IGBT
Package Category Transistor Outline, Vertical
Footprint Name Transistor Outline, Vertical - TO-3P(N)
Released Date Aug 23, 2024
Pinout / Pin List Click Here (Member Only)

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