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GT50NR21 - Toshiba

Description: (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.20 µs (typ.) (IC = 50 A) FWD : trr = 0.50 µs (typ.) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.8 V (typ.) (IC = 50 A) (6) High junction temperature : Tj = 175 (max)

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PCB Footprints
GT50NR21 - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-3P(N)
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3D Models
GT50NR21 - Toshiba  - 3D model - Transistor Outline, Vertical - TO-3P(N)
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GT50NR21 Details

  • Manufacturer Part Number:

    GT50NR21

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-3P

  • Package Description:

    2-16C1S, TO-3P(N), 3 PIN

  • Pin Count:

    2

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    3

  • Collector Current-Max (IC):

    50 A

  • Collector-Emitter Voltage-Max:

    1050 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    450 ns

  • Turn-on Time-Nom (ton):

    200 ns

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