GT50N Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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GT50NR21 Toshiba
1 (1) 6.5th generation(2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip.(3) Enhancement mode(4) High-speed switching IGBT : tf = 0.20 µs (typ.) (IC = 50 A) FWD : trr = 0.50 µs (typ.) (IF = 15 A)(5) Low saturation voltage : VCE(sat) = 1.8 V (typ.) (IC = 50 A)(6) High junction temperature : Tj = 175 (max) Transistor Outline, Vertical GT50NR21 1 Download Model
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GT50N322A Toshiba
1 Pb-F IGBT / TRANSISTOR TO-3PN Ic=50A Vces=600V Transistor Outline, Vertical GT50N322A 1 Download Model
Part Image Part Image 1 Toshiba GT50NR21,Q(O, IGBT Transistor, 50 A 1050 V, 0.45μs, 3-Pin TO-3P Other GT50NR21,Q(O 1 Download Model
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GT50N324(Q) Toshiba America Electronic Components
1 Insulated Gate Bipolar Transistor GT50N324(Q) 0 Build or Request
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GT50N324 Toshiba America Electronic Components
1 Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel GT50N324 0 Build or Request
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GT50NR21,Q Toshiba America Electronic Components
1 Insulated Gate Bipolar Transistor GT50NR21,Q 0 Build or Request
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GT50NR21 Toshiba Electronic Devices & Storage Corporation
1 IGBT, 1050 V, 50 A, Built-in Diodes, TO-3P(N) GT50NR21 0 Build or Request
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GT50N322A(Q) Toshiba America Electronic Components
1 Insulated Gate Bipolar Transistor GT50N322A(Q) 0 Build or Request
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A01AGT-50NS-BQ RCD Components Inc
1 Delay Line A01AGT-50NS-BQ 0 Build or Request
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A01SAGT-50NS-BW RCD Components Inc
1 Delay Line A01SAGT-50NS-BW 0 Build or Request
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RGT50NS65DC9 ROHM Semiconductor
1 Insulated Gate Bipolar Transistor, 48A I(C), 650V V(BR)CES, N-Channel, TO-262AA RGT50NS65DC9 0 Build or Request
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A01SAGT-50NS-B RCD Components Inc
1 Delay Line A01SAGT-50NS-B 0 Build or Request
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KT14-DGT50N-14.850MT Kyocera AVX Components
1 Sine Output Oscillator, 14.85MHz Nom KT14-DGT50N-14.850MT 0 Build or Request
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A0805AGT-50NS-BQ RCD Components Inc
1 Active Delay Line, 1-Func, 5-Tap, True Output, TTL, PDSO8 A0805AGT-50NS-BQ 0 Build or Request
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KT14-KGT50N-19.200MT Kyocera AVX Components
1 Sine Output Oscillator, 19.2MHz Nom KT14-KGT50N-19.200MT 0 Build or Request
Part Image Part Image 1 Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247 KGT50N60KDA-U/P 0 Build or Request
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A02AGT-50NS-BQ RCD Components Inc
1 Delay Line A02AGT-50NS-BQ 0 Build or Request
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A01AGT-50NS-BW RCD Components Inc
1 Delay Line A01AGT-50NS-BW 0 Build or Request
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IXGT50N60B IXYS Corporation
1 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-268 IXGT50N60B 0 Build or Request
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A03AGT-50NS-BQ RCD Components Inc
1 Delay Line A03AGT-50NS-BQ 0 Build or Request
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KT14-KGT50N-19.680MT Kyocera AVX Components
1 Sine Output Oscillator, 19.68MHz Nom KT14-KGT50N-19.680MT 0 Build or Request
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KT14-DGT50N-19.200MT Kyocera AVX Components
1 Sine Output Oscillator, 19.2MHz Nom KT14-DGT50N-19.200MT 0 Build or Request
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A02AGT-50NS-B RCD Components Inc
1 Delay Line A02AGT-50NS-B 0 Build or Request
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A02AGT-50NS-BW RCD Components Inc
1 Delay Line A02AGT-50NS-BW 0 Build or Request
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A02SAGT-50NS-BW RCD Components Inc
1 Delay Line A02SAGT-50NS-BW 0 Build or Request
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