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GT50N322A - Toshiba

Description: Pb-F IGBT / TRANSISTOR TO-3PN Ic=50A Vces=600V

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Symbol
GT50N322A - Toshiba - PCB symbol
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PCB Footprints
GT50N322A - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2-16C1C
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3D Models
GT50N322A - Toshiba - 3D model - Transistor Outline, Vertical - 2-16C1C
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GT50N322A Details

  • Manufacturer Part Number:

    GT50N322A

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0.4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    50 A

  • Collector-Emitter Voltage-Max:

    1000 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    250 ns

  • Gate-Emitter Voltage-Max:

    25 V

  • JESD-30 Code:

    R-XSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    156 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    700 ns

  • Turn-on Time-Nom (ton):

    330 ns

  • VCEsat-Max:

    2.8 V

GT50N322A Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The device should be placed near a heat sink or a thermal pad to ensure good heat dissipation.
  • The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator and a bias resistor network can be used to achieve this.
  • Monitor the device's junction temperature (Tj), case temperature (Tc), and thermal resistance (Rth) to prevent overheating. Ensure that the device is operated within the recommended temperature range.
  • Use an ESD protection circuit, such as a TVS diode or a zener diode, to protect the device from ESD. Handle the device with an anti-static wrist strap or mat, and ensure that the PCB is designed with ESD protection in mind.
  • Store the device in a dry, cool place, away from direct sunlight and moisture. Handle the device with care to prevent mechanical stress and damage. Use anti-static packaging and follow proper handling procedures to prevent ESD damage.

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GT50N322A Overview

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