IPN60R2K1CE - Infineon
Description: Transistor=N-Channel Power MOSFET, ID=3.7A, IDpuls=5.9A, Mounting=SMT, Temperature=-40°C 150°C, Ptot=5W, Package=SOT-223, QG=6.7nC, Qgd=3.6nC, RDS=2100mΩ, RthJA=75K/W, VDS=600V, VGS=2.5V 3.5V
Description: Transistor=N-Channel Power MOSFET, ID=3.7A, IDpuls=5.9A, Mounting=SMT, Temperature=-40°C 150°C, Ptot=5W, Package=SOT-223, QG=6.7nC, Qgd=3.6nC, RDS=2100mΩ, RthJA=75K/W, VDS=600V, VGS=2.5V 3.5V
