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IPN60R2K1CE - Infineon

Description: Transistor=N-Channel Power MOSFET, ID=3.7A, IDpuls=5.9A, Mounting=SMT, Temperature=-40°C 150°C, Ptot=5W, Package=SOT-223, QG=6.7nC, Qgd=3.6nC, RDS=2100mΩ, RthJA=75K/W, VDS=600V, VGS=2.5V 3.5V

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IPN60R2K1CE - Infineon PCB footprint - Other - Other - IPN60R2K1CE
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IPN60R2K1CE Details

  • Manufacturer Part Number:

    IPN60R2K1CE

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    SOT-223, 3 PIN

  • Country Of Origin:

    Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    11 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    3.7 A

  • Drain-source On Resistance-Max:

    2.1 Ω

  • FET Technology:

    SUPERJUNCTION MOSFET

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    5 W

  • Pulsed Drain Current-Max (IDM):

    5.9 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPN60R2K1CE Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IPN60R2K1CE is 175°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 150°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device's drain pad, and ensure the heat sink is properly mounted and secured. Additionally, consider the thermal resistance of the PCB and the surrounding environment.
  • The recommended gate drive voltage for the IPN60R2K1CE is between 10V and 15V. However, the device can tolerate gate voltages up to 20V. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device.
  • Yes, the IPN60R2K1CE is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, gate charge, and parasitic capacitances when designing the application. Additionally, ensure the device is properly cooled and the PCB is designed to minimize parasitic inductances.
  • To protect the IPN60R2K1CE from overvoltage and overcurrent, consider using a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, use a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions. It's also essential to design the application with proper thermal management and overtemperature protection.

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IPN60R2K1CE Overview

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