IPN95R3K7P7 - Infineon
Description: N-Channel Power MOSFET VDS max: 950V, RDS (on) max: 3.7Ω, Qg,typ: 6nC, ID,pulse: 2A, Eoss @ 500V: 0.5µJ, SMT, Package: PG-SOT223
Description: N-Channel Power MOSFET VDS max: 950V, RDS (on) max: 3.7Ω, Qg,typ: 6nC, ID,pulse: 2A, Eoss @ 500V: 0.5µJ, SMT, Package: PG-SOT223
