ISL73024SEHML - Renesas Electronics

Description: The ISL73024SEH is a 200V N-channel enhancement mode GaN power transistor. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for this device include commercial aerospace, medical, and nuclear power generation. GaN's exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and near z