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ISL73024SEHML - Renesas Electronics

Description: The ISL73024SEH is a 200V N-channel enhancement mode GaN power transistor. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for this device include commercial aerospace, medical, and nuclear power generation. GaN's exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and near z

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ISL73024SEHML Details

  • Manufacturer Part Number:

    ISL73024SEHML

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    CLCC

  • Pin Count:

    4

  • Manufacturer Package Code:

    J4.A

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    6.25

  • Additional Feature:

    HIGH RELIABILITY

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    7.5 A

  • Drain-source On Resistance-Max:

    0.11 Ω

  • FET Technology:

    HIGH ELECTRON MOBILITY

  • Feedback Cap-Max (Crss):

    1 pF

  • JESD-30 Code:

    R-XBCC-N4

  • JESD-609 Code:

    e4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    Gold (Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

ISL73024SEHML Frequently Asked Questions (FAQs)

  • Renesas provides a recommended PCB layout guide in their application note AN1995, which includes guidelines for component placement, routing, and thermal management to ensure optimal performance and minimize noise.
  • The ISL73024SEHML is designed to meet the requirements of NASA's EEE-INST-002 guidelines for radiation-hardened devices. However, additional design considerations, such as using radiation-tolerant components, shielding, and error correction mechanisms, may be necessary to ensure reliable operation in high-radiation environments.
  • While the datasheet specifies an operating temperature range of -55°C to 125°C, it's essential to note that the device's performance and reliability may degrade at extreme temperatures. It's recommended to consult with Renesas' application engineers for specific guidance on operating temperature ranges for your application.
  • Renesas provides a troubleshooting guide in their application note AN1965, which includes steps to diagnose and resolve issues with the internal oscillator, such as checking the oscillator frequency, supply voltage, and external clock sources.
  • The recommended power-up and power-down sequences are critical to ensure proper device operation and prevent damage. Renesas provides guidelines for power sequencing in their application note AN1993, which includes recommendations for power supply voltage, clock signals, and reset signals.

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ISL73024SEHML Overview

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