ISL73 Footprint, Symbol and 3D Model search results

Showing 25 of 303 results

Price & Stock Powered by

Filter by Manufacturer

Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	ISL73020SEHML Renesas Electronics	1	40V, 65A Enhancement Mode GaN Power Transistors	Other	ISL73020SEHML	3D model available Symbol and footprint available 3	1 Download Model
	ISL73040SEHL/PROTO Renesas Electronics	1	The ISL70040SEH and ISL73040SEH are low-side drivers designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL70040SEH operates with a supply voltage from 4. 5V to 13. 2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The ISL70040SEH and ISL73040SEH have a 4. 5V gate drive voltage (VDRV) generated using an internal regulator which prevents th	Other	ISL73040SEHL/PROTO	3D model available Symbol and footprint available 3	1 Download Model
	ISL73040SEHVL Renesas Electronics	1	The ISL70040SEH and ISL73040SEH are low-side drivers designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL70040SEH operates with a supply voltage from 4. 5V to 13. 2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The ISL70040SEH and ISL73040SEH have a 4. 5V gate drive voltage (VDRV) generated using an internal regulator which prevents th	Other	ISL73040SEHVL	3D model available Symbol and footprint available 3	1 Download Model
	ISL73444SEHF/PROTO Renesas Electronics	1	The ISL73444SEH features four low-power amplifiers optimized to provide maximum dynamic range. This operational amplifier (op amps) features a unique combination of rail-to-rail operation on the input and output as well as a slew-enhanced front-end that provides ultra-fast slew rates positively proportional to a given step size, thereby increasing accuracy under transient conditions, whether it's periodic or momentary. The ISL73444SEH also offers low power, low offset voltage, and low-temperature drift, mak	Other	ISL73444SEHF/PROTO	3D model available Symbol and footprint available 3	1 Download Model

	ISL73041SEHL/PROTO Renesas Electronics	1	The ISL73041SEH is a PWM input 12V Half Bridge GaN FET Driver designed to drive low rDS(ON), high Qgs enhance mode Gallium Nitride (eGaN) FETs up to 1.5MHz operation for DC/DC switching regulators. An integrated programmable GaN FET gate drive voltage, high-side bootstrap switch and high gate drive current provide a compact and robust GaN FET half bridge driver.The ISL73041SEH is designed to interface directly to the ISL73847SEH dual phase PWM buck controller to create a high efficiency point-of-load regula	Other	ISL73041SEHL/PROTO	3D model available Symbol and footprint available 3	1 Download Model
	ISL73033SLHMKZ Renesas Electronics	1	The ISL73033SLHM is a radiation hardened 100V GaN FET with integrated Low-Side GaN FET driver. The GaN FET are capable of providing up to 45A output and have a RDSON as low as 7.5mΩ. The integrated Low-Side GaN FET driver has a supply range from 4.5V to 13.2V and can accept logic levels up to 14.7V, regardless of supply voltage. The ISL73033SLHM has propagation delay of 42ns, enabling high switching frequency for better power conversion efficiency. The ISL73033SLHM is characterized over the full military t	BGA	ISL73033SLHMKZ	3D model available Symbol and footprint available 3	1 Download Model
	ISL73847M50BZ Renesas Electronics	1	The ISL73847M is a synchronous buck controller that can operate as a single or dual-phase controller. It works with the ISL71441M (half-bridge GaN FET driver) to generate point-of-load voltage rails for commercial space applications.It accepts an input voltage range of 4.5V to 19V with a programmable PWM output switching frequency between 250kHz and 1.5MHz with a single resistor. The output can regulate a voltage upwards of 600mV and is limited on the top end by the minimum off time and selected switching f	Small Outline Packages	ISL73847M50BZ	3D model available Symbol and footprint available 3	1 Download Model
	ISL73847SLHMBZ Renesas Electronics This part was updated within the past 30 days. Set alerts for model updates on the part download page.	1	▪ Qualified to Renesas rad hard QML-P equivalent\r\nscreening and QCI flow (R34TB0005EU)\r\n• All screening and QCI is in accordance with\r\nMIL-PRF-38535L Class-P\r\n▪ Wide operating voltage range:\r\n• Input: 4.5V to 19V\r\n• Output: 0.6V to\r\nVPWR_STAGE×((TSW-120ns)/TSW)\r\n▪ Programmable PWM output switching frequency\r\n• 250kHz to 1.5MHz\r\n▪ Optional Droop regulation\r\n▪ Current mode control provides\r\n• Excellent power supply rejection\r\n• Simplified control scheme\r\n▪ Output differential remote sensing\r\n▪ Programmable so	Small Outline Packages	ISL73847SLHMBZ	3D model available Symbol and footprint available 3	1 Download Model
	ISL73041SEHML Renesas Electronics	1	The ISL73041SEH is a PWM input 12V Half Bridge GaN FET Driver designed to drive low rDS(ON), high Qgs enhance mode Gallium Nitride (eGaN) FETs up to 1.5MHz operation for DC/DC switching regulators. An integrated programmable GaN FET gate drive voltage, high-side bootstrap switch and high gate drive current provide a compact and robust GaN FET half bridge driver.The ISL73041SEH is designed to interface directly to the ISL73847SEH dual phase PWM buck controller to create a high efficiency point-of-load regula	Other	ISL73041SEHML	3D model available Symbol and footprint available 3	1 Download Model
	ISL73847M30BZ Renesas Electronics	1	The ISL73847M is a synchronous buck controller that can operate as a single or dual-phase controller. It works with the ISL71441M (half-bridge GaN FET driver) to generate point-of-load voltage rails for commercial space applications.It accepts an input voltage range of 4.5V to 19V with a programmable PWM output switching frequency between 250kHz and 1.5MHz with a single resistor. The output can regulate a voltage upwards of 600mV and is limited on the top end by the minimum off time and selected switching f	Small Outline Packages	ISL73847M30BZ	3D model available Symbol and footprint available 3	1 Download Model
	ISL73840SEHF/PROTO Intersil Corporation	1	Single-Ended Multiplexer		ISL73840SEHF/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73840SEHVF Intersil Corporation	1	Single-Ended Multiplexer		ISL73840SEHVF	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73128EHVX Intersil Corporation	1	RF POWER TRANSISTOR		ISL73128EHVX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73841SEHVX Intersil Corporation	1	Single-Ended Multiplexer		ISL73841SEHVX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73040SEHX/SAMPLE Intersil Corporation	1	Buffer/Inverter Based Peripheral Driver		ISL73040SEHX/SAMPLE	3D model not available Symbol and footprint not available 0	0 Build or Request

	ISL73419SEHF/PROTO Renesas Electronics	1	The ISL70419SEH and ISL73419SEH contain four very high precision amplifiers featuring the perfect combination of low noise vs power consumption. Low offset voltage, low IBIAS current, and low temperature drift make it the ideal choice for applications requiring both high DC accuracy and AC performance. The combination of high precision, low noise, low power, and small footprint provides the user with outstanding value and flexibility relative to similar competitive parts.Applications for these amplifiers in		ISL73419SEHF/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73419SEHVF Renesas Electronics	1	The ISL70419SEH and ISL73419SEH contain four very high precision amplifiers featuring the perfect combination of low noise vs power consumption. Low offset voltage, low IBIAS current, and low temperature drift make it the ideal choice for applications requiring both high DC accuracy and AC performance. The combination of high precision, low noise, low power, and small footprint provides the user with outstanding value and flexibility relative to similar competitive parts.Applications for these amplifiers in		ISL73419SEHVF	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL738843ASEHVF/PROTO Renesas Electronics	1	Radiation Hardened, High Performance Industry Standard Single-Ended Current Mode PWM Controller		ISL738843ASEHVF/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73096EHVX Renesas Electronics	1	The ISL73096, ISL73127 and ISL73128 are radiation hardened bipolar transistor arrays. The ISL73096 consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127 consists of five NPN transistors on a common substrate. The ISL73128 consists of five PNP transistors on a common substrate. The ISL73096EH, ISL73127EH and ISL73128EH devices encompass all of the production testing of the ISL73096RH, ISL73127RH and ISL73128RH devices and additionally are tested in the Intersil Enhance		ISL73096EHVX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73321SEHVX Renesas Electronics	1	The ISL70321SEH and ISL73321SEH are radiation hardened and SEE mitigated power supply sequencers designed to drive Point-of-Load (POL) regulators with enable pins. Up to four power supplies can be fully sequenced by a single device or multiple devices can be easily cascaded to sequence an unlimited number of power supplies for dense RF applications. This power supply sequencer requires only two feedback resistors per power supply and a single resistor to set the rising and falling delay. The device features		ISL73321SEHVX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73020SEHMX Renesas Electronics	1	The ISL73020SEH is a 40V N-channel enhancement mode GaN power transistor. This GaN FET has been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for this device include commercial aerospace, medical, and nuclear power generation. The exceptionally high electron mobility and low temperature coefficient of the GaN allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and z		ISL73020SEHMX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL736AEHF/PROTO Renesas Electronics	1	The devices in this family are radiation hardened 5.0V/3.3V supervisory circuits that reduce the complexity required to monitor supply voltages in microprocessor systems. These devices significantly improve accuracy and reliability relative to discrete solutions. Each IC provides four key functions: A reset output during power-up, power-down and brownout conditions, an independent watchdog output that goes low if the watchdog input has not been toggled within 1.6s, a precision threshold detector for monitor		ISL736AEHF/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73840SEHF/PROTO Renesas Electronics	1	The ISL73840SEH is a radiation tolerant, 16-channel high ESD protected multiplexer fabricated using the Renesas proprietary P6SOI (Silicon On Insulator) process technology. It operates with a dual supply voltage ranging from ±10. 8V to ±16. 5V. It has a 4-bit address plus an enable pin that can be driven with adjustable logic thresholds to conveniently select one of 16 available channels. An inactive channel is separated from an active channel by a high impedance, which inhibits any interaction between them		ISL73840SEHF/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73444SEHVX Renesas Electronics	1	The ISL73444SEH features four low-power amplifiers optimized to provide maximum dynamic range. This operational amplifier (op amps) features a unique combination of rail-to-rail operation on the input and output as well as a slew-enhanced front-end that provides ultra-fast slew rates positively proportional to a given step size, thereby increasing accuracy under transient conditions, whether it's periodic or momentary. The ISL73444SEH also offers low power, low offset voltage, and low-temperature drift, mak		ISL73444SEHVX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73128EHVF Renesas Electronics	1	The ISL73096, ISL73127 and ISL73128 are radiation hardened bipolar transistor arrays. The ISL73096 consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127 consists of five NPN transistors on a common substrate. The ISL73128 consists of five PNP transistors on a common substrate. The ISL73096EH, ISL73127EH and ISL73128EH devices encompass all of the production testing of the ISL73096RH, ISL73127RH and ISL73128RH devices and additionally are tested in the Intersil Enhance		ISL73128EHVF	3D model not available Symbol and footprint not available 0	0 Build or Request
1 2 3 4 5 6 7 8 9

Can't find what you're looking for? Request this part

ISL73 Model Download Search Results

Popular Power Field-Effect Transistors