MBR30H30CTG - onsemi

Description: Low Forward Voltage; Low Power Loss/High Efficiency; High Surge Capacity; 150°C Operating Junction Temperature; 30A Total (15A Per Diode Leg); GuardRing for Stress Protection; AEC-Q101 Qualified and PPAP Capable; These are Pb-Free Packages; NRVBB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements