MJE210G - onsemi

Description: High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc hFE = 45 (Min) @ IC = 2.0 Adc hFE = 10 (Min) @ IC = 5.0 Adc; Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB; Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc VCE(sat) = 0.75 Vdc (Max) @ IC = 2.0 Adc; High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc; Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc; Pb-Free Packages are Available