MURS480ET3G - onsemi

Description: 20mJ Avalanche Energy Guaranteed; Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits; Ultrafast 75 Nanosecond Recovery Time; 175C Operating Junction Temperature; Low Forward Voltage; Low Leakage Current; High Temperature Glass Passivated Junction; Reverse Voltage to 800V; This is a Pb-Free Device; Case: Epoxy, Molded; Weight: 217 mg (Approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead Temperature for Soldering Pu