NCV8440ASTT3G - onsemi
Description: Diode Clamp Between Gate and Source; ESD Protection HBM 5000 V; Active Overvoltage Gate to Drain Clamp; Scalable to Lower or Higher RDS(on); Internal Series Gate Resistance
Description: Diode Clamp Between Gate and Source; ESD Protection HBM 5000 V; Active Overvoltage Gate to Drain Clamp; Scalable to Lower or Higher RDS(on); Internal Series Gate Resistance
