NDS9407 - onsemi
Description: RDS(ON) = 150 mΩ @ VGS = -10V; RDS(ON) = 240 mΩ @ VGS = -4.5V ; High performance trench technology for extremelylow RDS(ON); -3.0A, -60V; Fast switching speed; Low gate charge; High power and current handling capability
Description: RDS(ON) = 150 mΩ @ VGS = -10V; RDS(ON) = 240 mΩ @ VGS = -4.5V ; High performance trench technology for extremelylow RDS(ON); -3.0A, -60V; Fast switching speed; Low gate charge; High power and current handling capability
