NIF9N05CLT1G - onsemi
Description: Diode Clamp Between Gate and Source; ESD Protection - HBM 5000 V; Active Over-Voltage Gate to Drain Clamp; Scalable to Lower or Higher RDS(on); Internal Series Gate Resistance; Pb-Free Packages are Available
Description: Diode Clamp Between Gate and Source; ESD Protection - HBM 5000 V; Active Over-Voltage Gate to Drain Clamp; Scalable to Lower or Higher RDS(on); Internal Series Gate Resistance; Pb-Free Packages are Available
