NIS5132MN2TXG - onsemi

Description: Integrated Power Device • Power Device Thermally Protected • No External Current Shunt Required • 9 V to 18 V Input Range • 44 m Typical • Internal Charge Pump • Internal Undervoltage Lockout Circuit • Internal Overvoltage Clamp (MN1 and MN2 versions) • ESD Ratings: Human Body Model (HBM); 2000 V Machine Model (MM); 200 V • These Devices are Pb−Free and are RoHS Compliant