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NIS5132MN2TXG - onsemi

Description: Integrated Power Device • Power Device Thermally Protected • No External Current Shunt Required • 9 V to 18 V Input Range • 44 m Typical • Internal Charge Pump • Internal Undervoltage Lockout Circuit • Internal Overvoltage Clamp (MN1 and MN2 versions) • ESD Ratings: Human Body Model (HBM); 2000 V Machine Model (MM); 200 V • These Devices are Pb−Free and are RoHS Compliant

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NIS5132MN2TXG - onsemi PCB footprint - Small Outline No-lead - Small Outline No-lead - DFN10, 3x3, 0.5P CASE 485C ISSUE F
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NIS5132MN2TXG - onsemi  - 3D model - Small Outline No-lead - DFN10, 3x3, 0.5P CASE 485C ISSUE F
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NIS5132MN2TXG Details

  • Manufacturer Part Number:

    NIS5132MN2TXG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    DFN10, 3x3, 0.5P

  • Pin Count:

    10

  • Manufacturer Package Code:

    485C

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Adjustable Threshold:

    NO

  • Analog IC - Other Type:

    eFUSE

  • JESD-30 Code:

    S-XDSO-N10

  • JESD-609 Code:

    e3

  • Length:

    3 mm

  • Moisture Sensitivity Level:

    1

  • Number of Channels:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    10

  • Package Body Material:

    UNSPECIFIED

  • Package Code:

    VSON

  • Package Equivalence Code:

    SOLCC10,.12,20

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE, VERY THIN PROFILE

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    1 mm

  • Supply Voltage-Max (Vsup):

    18 V

  • Supply Voltage-Min (Vsup):

    9 V

  • Supply Voltage-Nom (Vsup):

    12 V

  • Surface Mount:

    YES

  • Temperature Grade:

    OTHER

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Pitch:

    0.5 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Width:

    3 mm

NIS5132MN2TXG Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The maximum allowed voltage on the input pins is 5.5V, which is the absolute maximum rating. Operating the device above this voltage can cause permanent damage.
  • Yes, the device is suitable for high-frequency switching applications up to 100 kHz. However, ensure proper PCB layout, decoupling, and filtering to minimize electromagnetic interference (EMI).
  • Use ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins. Also, follow proper handling and storage procedures to prevent ESD damage.

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NIS5132MN2TXG Overview

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