NTGD3148NT1G - onsemi
Description: Low Threshold Levels, VGS(th) < 1.5 V; Low Gate Charge (Typ. 3.8 nC); Leading Edge Trench Technology of Low RDS(on); High Power and Current Handling Capability
Description: Low Threshold Levels, VGS(th) < 1.5 V; Low Gate Charge (Typ. 3.8 nC); Leading Edge Trench Technology of Low RDS(on); High Power and Current Handling Capability
