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NTGD3148NT1G - onsemi

Description: Low Threshold Levels, VGS(th) < 1.5 V; Low Gate Charge (Typ. 3.8 nC); Leading Edge Trench Technology of Low RDS(on); High Power and Current Handling Capability

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PCB Footprints
NTGD3148NT1G - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOP−6
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3D Models
NTGD3148NT1G - onsemi  - 3D model - SOT23 (6-Pin) - TSOP−6
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NTGD3148NT1G Details

  • Manufacturer Part Number:

    NTGD3148NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TSOP-6

  • Package Description:

    TSOP-6

  • Pin Count:

    6

  • Manufacturer Package Code:

    318G-02

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.95

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    0.07 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.1 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTGD3148NT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. Ensure a minimum of 1 oz copper thickness and a thermal via array under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan. Monitor junction temperature (TJ) and adjust the system design accordingly.
  • Monitor Vds, Ids, Vgs, and TJ. Implement over-temperature protection, over-current protection, and under-voltage lockout (UVLO) to ensure reliable operation and fault detection.
  • Yes, a gate driver IC can be used to improve switching performance and reduce power losses. Ensure the gate driver is compatible with the NTGD3148NT1G's gate-source voltage and current requirements.
  • Use a shielded enclosure, keep high-frequency traces short, and use a common-mode choke or ferrite bead to filter out EMI. Ensure proper grounding and decoupling of the device.

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NTGD3148NT1G Overview

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