NTH4L027N65S3F - onsemi

Description: 700 V @ TJ = 150 °C; Ultra Low Gate Charge (Typ. Qg = 259 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF); Excellent body diode performance (low Qrr, robust body diode); Optimized Capacitance; Kelvin contact; RoHS Compliant; 100% Avalanche Tested; Typ. RDS(on) = 23 mΩ