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NTH4L027N65S3F - onsemi

Description: 700 V @ TJ = 150 °C; Ultra Low Gate Charge (Typ. Qg = 259 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF); Excellent body diode performance (low Qrr, robust body diode); Optimized Capacitance; Kelvin contact; RoHS Compliant; 100% Avalanche Tested; Typ. RDS(on) = 23 mΩ

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NTH4L027N65S3F Details

  • Manufacturer Part Number:

    NTH4L027N65S3F

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-4

  • Manufacturer Package Code:

    340CJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Date Of Intro:

    2019-05-20

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    1610 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.0274 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    595 W

  • Pulsed Drain Current-Max (IDM):

    187.5 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTH4L027N65S3F Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NTH4L027N65S3F is -55°C to 150°C.
  • To ensure proper biasing, follow the recommended voltage and current ratings in the datasheet, and consider using a gate driver or voltage regulator to maintain stable voltage levels.
  • The NTH4L027N65S3F has a high power density, so thermal management is crucial. Ensure good heat sinking, use a heat spreader or thermal interface material, and consider using a thermal management IC or fan for high-power applications.
  • Handle the device with ESD-protective equipment, use an ESD wrist strap or mat, and ensure the device is properly grounded during handling and assembly.
  • Follow good PCB design practices, such as using a solid ground plane, minimizing trace lengths, and using a low-inductance layout to reduce parasitic effects.

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NTH4L027N65S3F Overview

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