NTH4L040N120M3S - onsemi

Description: Ultra Low Gate Charge (QG(tot) = 75 nC); High Speed Switching with Low Capacitance (Coss = 80 pF); 15V to 18V Gate Drive; New M3S technology: 40 mohm RDS(ON) with low Eon and Eoff losses; 100% Avalanche Tested; Halide Free and RoHS Compliant; TO-247-4L Package with Kelvin source configuration; Excellent FOM [ = Rdson * Eoss ]