NTHL017N60S5H - onsemi

Description: 100% Avalanche Tested; RoHS Compliant; Internal Gate Resistance: 1.07 Ω; Ultra Low Gate Charge (Typ. Qg = 265 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 322 pF); Fast switching performance with robust body diode; 650 V @ TJ = 150°C; Typ. RDS(on) = 14.3 m Ω