NTMT045N065SC1 - onsemi

Description: Low Effective Output Capacitance (Coss = 162 pF); Zero reverse recovery current of body diode; Max Junction Temperature 175°C; Typ. RDS(on) = 33 mΩ @ Vgs : 18V Low conduction loss; Leadless thin SMD package; Kelvin Source Configuration; Ultra Low Gate Charge (Qg(tot) = 105 nC); 650V rated; 100% Avalanche Tested; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; Moisture Sensitivity Level 1 guarantee; Internal Gate Resistance: 3.1 Ω