NTP082N65S3HF - onsemi

Description: 700 V @ TJ = 150 °C; Ultra Low Gate Charge (Typ. Qg = 81 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF); Optimized Capacitance; Excellent body diode performance (low Qrr, robust body diode); Typ. RDS(on) = 70 mΩ; 100% Avalanche Tested; RoHS Compliant