NTP185N60S5H - onsemi

Description: Fast switching performance with robust body diode; Ultra Low Gate Charge (Typ. Qg = 25 nC); Low Time Related Output Capacitance (Typ. COSS(tr.) = 372 pF); 650 V @ TJ = 150°C; Typ. RDS(on) = 148 m Ω; 100% Avalanche Tested; RoHS Compliant; Internal Gate Resistance: 0.9 Ω