NTPF082N65S3F - onsemi

Description: 700 V @ TJ = 150 oC; Ultra Low Gate Charge (Typ. Qg = 70 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 680 pF); Optimized Capacitance; Excellent body diode performance (low Qrr, robust body diode); Typ. RDS(on) = 70 mΩ; 100% Avalanche Tested; RoHS Compliant