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NTPF082N65S3F - onsemi

Description: 700 V @ TJ = 150 oC; Ultra Low Gate Charge (Typ. Qg = 70 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 680 pF); Optimized Capacitance; Excellent body diode performance (low Qrr, robust body diode); Typ. RDS(on) = 70 mΩ; 100% Avalanche Tested; RoHS Compliant

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NTPF082N65S3F - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 FULLPAK CASE 221D-03
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NTPF082N65S3F - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 FULLPAK CASE 221D-03
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NTPF082N65S3F Details

  • Manufacturer Part Number:

    NTPF082N65S3F

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3 FullPak

  • Manufacturer Package Code:

    221D-03

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    510 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.082 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    48 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTPF082N65S3F Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the NTPF082N65S3F is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good airflow around the device, and consider using a thermal interface material (TIM) to improve heat transfer between the device and heat sink.
  • The recommended gate drive voltage for the NTPF082N65S3F is between 10V and 15V. This ensures reliable switching and minimizes the risk of false turn-on or oscillations.
  • Yes, the NTPF082N65S3F is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the gate drive circuitry is optimized for high-frequency operation, and consider using a gate driver IC to minimize switching losses.
  • To protect the NTPF082N65S3F from overvoltage and overcurrent, consider using a voltage clamp or a transient voltage suppressor (TVS) to limit voltage spikes. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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NTPF082N65S3F Overview

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