NTPF0 Model Download Search Results
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NTPF082N65S3F
onsemi
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1 | 700 V @ TJ = 150 oC; Ultra Low Gate Charge (Typ. Qg = 70 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 680 pF); Optimized Capacitance; Excellent body diode performance (low Qrr, robust body diode); Typ. RDS(on) = 70 mΩ; 100% Avalanche Tested; RoHS Compliant | Transistor Outline, Vertical | NTPF082N65S3F |
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NTPF095N65S3H
onsemi
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1 | 700 V @ TJ = 150°C; Ultra Low Gate Charge (Typ. Qg = 58 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 398 pF); Fast switching performance with robust body diode; 100% Avalanche Tested; RoHS Compliant; Typ. RDS(on) = 77 m Ω; Internal Gate Resistance: 1.2 Ω | NTPF095N65S3H |
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