NTPF450N80S3Z - onsemi

Description: 900 V @ TJ = 150 °C; Ultra Low Gate Charge (Typ. Qg = 19.3 nC); Low Stored Energy in Output Capacitance (Eoss = 2.2 µJ @ 400 V); Optimized Capacitance; ESD Improved Capability with Zener Diode; Typ. RDS(on) = 380 mΩ; RoHS Compliant; 100% Avalanche Tested; Internal Gate Resistance: 4.0 Ω