NVJS3151PT1G - onsemi
Description: Leading Trench Technology for Low RDS(on) Extending Battery Life; SC−88 Small Outline (2x2 mm, SC70−6 Equivalent); Gate Diodes for ESD Protection; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant
Description: Leading Trench Technology for Low RDS(on) Extending Battery Life; SC−88 Small Outline (2x2 mm, SC70−6 Equivalent); Gate Diodes for ESD Protection; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant
