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NVJS3151PT1G - onsemi

Description: Leading Trench Technology for Low RDS(on) Extending Battery Life; SC−88 Small Outline (2x2 mm, SC70−6 Equivalent); Gate Diodes for ESD Protection; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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PCB Footprints
NVJS3151PT1G - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SC−88 2.00x1.25x0.90, 0.65P CASE 419B−02 ISSUE Z
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3D Models
NVJS3151PT1G - onsemi  - 3D model - SOT23 (6-Pin) - SC−88 2.00x1.25x0.90, 0.65P CASE 419B−02 ISSUE Z
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NVJS3151PT1G Details

  • Manufacturer Part Number:

    NVJS3151PT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88-6 / SC-70-6 / SOT-363-6

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND RESISTOR

  • DS Breakdown Voltage-Min:

    12 V

  • Drain Current-Max (ID):

    2.7 A

  • Drain-source On Resistance-Max:

    0.06 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.625 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVJS3151PT1G Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the device and to connect it to a thermal plane or a heat sink.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, provide adequate heat sinking, and use a thermal interface material (TIM) with a high thermal conductivity. Additionally, consider using a device with a higher temperature rating or implementing thermal monitoring and shutdown mechanisms.
  • Exceeding the maximum junction temperature (Tj) rating can lead to reduced device lifespan, increased thermal resistance, and potentially catastrophic failure. It's crucial to ensure that the device operates within the recommended temperature range to maintain reliability and performance.
  • To handle ESD protection for the NVJS3151PT1G, follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits or devices in the design. It's also recommended to use a device with built-in ESD protection or to add external ESD protection components.
  • When paralleling multiple NVJS3151PT1G devices, consider the current sharing and balancing between devices, ensure that the devices are properly matched, and provide adequate heat sinking and thermal management. It's also important to follow the recommended layout and routing guidelines to minimize parasitic inductances and resistances.

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NVJS3151PT1G Overview

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