SCT10N120 - STMicroelectronics
Description: MOSFET Silicon carbide Power MOSFET 1200 V, 10 A, 550 mOhm (typ., TJ = 150 C) in an HiP247 package
Description: MOSFET Silicon carbide Power MOSFET 1200 V, 10 A, 550 mOhm (typ., TJ = 150 C) in an HiP247 package
