SI4532DY - onsemi

Description: High power and current handling capability in a widely used surface mount package ; Dual (N & P-Channel) MOSFET in surface mountpackage ; High density cell design for extremely low RDS(ON) ; P-Channel  -3.5 A,-30V  RDS(ON) = 0.085 Ω @ VGS = -10V  RDS(ON) = 0.190 Ω @ VGS = -4.5V ; N-Channel  3.9 A, 30V  RDS(ON) = 0.065 Ω @ VGS = 10V  RDS(ON) = 0.095 Ω @ VGS = 4.5V