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1N5767 - Microsemi Corporation

Description: Diode PIN Attenuator/Switch 100V 2-Pin

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PCB Footprints
1N5767 - Microsemi Corporation PCB footprint - Diodes, Axial Diameter Horizontal Mounting - Diodes, Axial Diameter Horizontal Mounting - 1N5767
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1N5767 - Microsemi Corporation  - 3D model - Diodes, Axial Diameter Horizontal Mounting - 1N5767
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1N5767 Details

  • Manufacturer Part Number:

    1N5767

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Transferred

  • Package Description:

    GLASS PACKAGE-2

  • Pin Count:

    2

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Additional Feature:

    LOW DISTORTION

  • Application:

    ATTENUATOR; SWITCHING

  • Breakdown Voltage-Min:

    100 V

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Capacitance-Max:

    0.4 pF

  • Diode Capacitance-Nom:

    0.4 pF

  • Diode Element Material:

    SILICON

  • Diode Forward Resistance-Max:

    3.5 Ω

  • Diode Res Test Current:

    100 mA

  • Diode Res Test Frequency:

    100 MHz

  • Diode Type:

    PIN DIODE

  • Frequency Band:

    ULTRA HIGH FREQUENCY

  • JESD-30 Code:

    O-LALF-W2

  • JESD-609 Code:

    e0

  • Minority Carrier Lifetime-Nom:

    2 µs

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    GLASS

  • Package Shape:

    ROUND

  • Package Style:

    LONG FORM

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Technology:

    POSITIVE-INTRINSIC-NEGATIVE

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    WIRE

  • Terminal Position:

    AXIAL

1N5767 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 1N5767 is -65°C to 175°C, although it can withstand storage temperatures from -65°C to 200°C.
  • To ensure proper soldering, use a soldering iron with a temperature of 250°C to 260°C, and apply a small amount of solder to the leads. Avoid applying excessive heat or force, which can damage the device.
  • Yes, the 1N5767 is a radiation-hardened device, making it suitable for use in high-reliability and aerospace applications. However, it's essential to follow the manufacturer's guidelines and testing procedures to ensure compliance with specific industry standards.
  • To prevent ESD damage, handle the 1N5767 with ESD-protective equipment, such as wrist straps, mats, or bags. Ensure that the workspace is ESD-safe, and avoid touching the device's leads or pins with bare hands.
  • The recommended power derating for the 1N5767 is 1.5 W at 25°C, with a linear derating to 0.5 W at 175°C. This ensures the device operates within its safe operating area and prevents overheating.

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1N5767 Overview

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