Part Image

2DB1132R-13 - Diodes Incorporated

Description: Bipolar Transistors - BJT 1000W -32Vceo

Download 2DB1132R-13 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
2DB1132R-13 - Diodes Incorporated PCB footprint - Other - Other - SOT89_24
click to zoom
3D Models
2DB1132R-13 - Diodes Incorporated  - 3D model - Other - SOT89_24
click to zoom

2DB1132R-13 Details

  • Manufacturer Part Number:

    2DB1132R-13

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    7

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    1 A

  • Collector-Emitter Voltage-Max:

    32 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    180

  • JESD-30 Code:

    R-PSSO-F3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    1 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    190 MHz

2DB1132R-13 Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the 2DB1132R-13 is 1.65V to 5.5V.
  • To ensure proper biasing, connect the input voltage (VIN) to a stable voltage source, and decouple the power supply with a 10uF capacitor. Also, ensure the input voltage is within the recommended operating range.
  • The maximum current rating for the 2DB1132R-13 is 150mA. Exceeding this rating may cause damage to the device.
  • To prevent electrostatic discharge (ESD) damage, handle the 2DB1132R-13 with an anti-static wrist strap or mat, and ensure the workspace is ESD-protected.
  • The thermal resistance (RθJA) of the 2DB1132R-13 is 240°C/W. This value is critical for thermal management and heat dissipation.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

2DB1132R-13 Overview

Use the download button to access the 2DB1132R-13 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like 2DB11, or try a keyword search, such as Small Signal Bipolar Transistors

Parts related to 2DB1132R-13

Showing 0 results