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2N2608 - InterFET

Description: JFET JFET P-Channel -30V 50mA 300mW 2mW

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PCB Footprints
2N2608 - InterFET PCB footprint - Other - Other - TO-18
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3D Models
2N2608 - InterFET  - 3D model - Other - TO-18
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2N2608 Details

  • Manufacturer Part Number:

    2N2608

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Contact Manufacturer

  • Part Package Code:

    BCY

  • Package Description:

    TO-18, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    InterFET Corporation

  • FET Technology:

    JUNCTION

  • JEDEC-95 Code:

    TO-18

  • JESD-30 Code:

    O-MBCY-W3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    200 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Element Material:

    SILICON

2N2608 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N2608 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified voltage and current ratings to ensure reliable operation.
  • Thermal management is critical for the 2N2608, especially in high-power applications. Ensure good heat sinking, use a thermal interface material (TIM) if necessary, and consider using a heat sink with a thermal conductivity of at least 1 W/m-K. Also, follow the recommended PCB layout and thermal design guidelines to minimize thermal resistance.
  • The recommended storage temperature range for the 2N2608 is -40°C to 150°C, as specified in the datasheet. However, it's essential to follow proper storage and handling procedures to prevent damage from moisture, electrostatic discharge, and mechanical stress.
  • Yes, the 2N2608 can be used in switching applications, but it's essential to consider the device's switching characteristics, such as turn-on and turn-off times, and ensure that the application is within the device's specified ratings. Additionally, consider using a gate driver or other switching circuitry to minimize switching losses and ensure reliable operation.
  • The gate resistor value for the 2N2608 depends on the specific application and switching frequency. A general rule of thumb is to use a gate resistor value between 1 kΩ and 10 kΩ. However, it's recommended to consult the datasheet and application notes for more specific guidance, and to consider factors such as gate charge, switching frequency, and power dissipation.

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2N2608 Overview

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2N2608 Alternates

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Part Image 2N2608 Solitron Devices Inc

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-18

Part Image 2N2608 New England Semiconductor

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET

Part Image 2N2608 Motorola Semiconductor Products

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-18

Part Image 2N2608 Space Power Electronics Inc

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-18, TO-18, 3 PIN

Part Image JAN2N2608 Microsemi Corporation (now Microchip)

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-206AA

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