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2N2907Ae4 - Microsemi Corporation

Description: Bipolar (BJT) Transistor PNP 60V 600mA 500mW Through Hole TO-18

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2N2907Ae4 - Microsemi Corporation PCB footprint - Other - Other - TO-18_1
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2N2907Ae4 - Microsemi Corporation  - 3D model - Other - TO-18_1
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2N2907Ae4 Details

  • Manufacturer Part Number:

    2N2907AE4

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    BCY

  • Package Description:

    TO-18, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Collector Current-Max (IC):

    0.6 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    50

  • JEDEC-95 Code:

    TO-206AA

  • JESD-30 Code:

    O-MBCY-W3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.4 W

  • Surface Mount:

    NO

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    200 MHz

  • Turn-off Time-Max (toff):

    300 ns

  • Turn-on Time-Max (ton):

    45 ns

2N2907Ae4 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2N2907AE4 is -55°C to 150°C, although the datasheet only specifies the electrical characteristics at 25°C.
  • To ensure reliability, follow proper handling and storage procedures, use a clean and dry environment, and avoid exceeding the maximum ratings specified in the datasheet. Additionally, consider using a radiation-hardened version of the transistor if it will be exposed to radiation.
  • The typical switching time for the 2N2907AE4 is around 10-20 ns, although this can vary depending on the specific application and operating conditions.
  • Yes, the 2N2907AE4 can be used in switching regulator applications due to its high switching speed and low saturation voltage. However, ensure that the transistor is properly biased and that the switching frequency is within the recommended range.
  • To protect the 2N2907AE4 from ESD, use proper handling procedures such as wearing an anti-static wrist strap, using an anti-static mat, and storing the devices in anti-static packaging. Additionally, consider using ESD protection devices such as diodes or resistors in the circuit design.

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