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2N3459 - InterFET

Description: JFET N-Channel -50V Low Ciss

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PCB Footprints
2N3459 - InterFET PCB footprint - Other - Other - TO-18
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3D Models
2N3459 - InterFET  - 3D model - Other - TO-18
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2N3459 Details

  • Manufacturer Part Number:

    2N3459

  • Part Life Cycle Code:

    Contact Manufacturer

  • ECCN Code:

    EAR99

  • Manufacturer:

    InterFET Corporation

  • FET Technology:

    JUNCTION

  • JESD-609 Code:

    e0

  • Operating Temperature-Max:

    200 °C

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.3 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

2N3459 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N3459 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general rule, it's recommended to operate the device within the specified voltage and current ratings to ensure reliable operation.
  • To ensure the 2N3459 is properly biased for linear operation, you should follow the recommended biasing scheme outlined in the datasheet. This typically involves setting the base-emitter voltage (Vbe) to around 0.7V and the collector-emitter voltage (Vce) to around 1/3 to 1/2 of the supply voltage. Additionally, you should ensure that the device is operated within its recommended current and power ratings.
  • The recommended PCB layout and thermal management for the 2N3459 involve using a thermally conductive PCB material, placing the device on a heat sink or thermal pad, and ensuring good airflow around the device. You should also minimize the thermal resistance between the device and the heat sink by using a thermal interface material (TIM) and ensuring good contact between the device and the heat sink.
  • To handle ESD protection for the 2N3459, you should follow standard ESD protection practices, such as using ESD-sensitive handling procedures, storing the devices in anti-static packaging, and using ESD protection devices (such as TVS diodes or ESD protection arrays) in the circuit design.
  • The reliability and failure rate expectations for the 2N3459 are typically specified in the device's reliability report or datasheet. However, as a general rule, the failure rate of a transistor is influenced by factors such as operating conditions, temperature, and manufacturing quality. You should consult the manufacturer's reliability data and follow recommended operating conditions to minimize the risk of device failure.

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2N3459 Overview

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